BFY51 DATASHEET PDF

BFY51 DATASHEET PDF

Symbol. Parameter. Value. Unit. BFY BFY VCBO. Collector-Base Voltage ( IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. BFY51 datasheet, BFY51 pdf, BFY51 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose. BFY51 Transistor Datasheet pdf, BFY51 Equivalent. Parameters and Characteristics.

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BFY51 Datasheet(PDF) – NXP Semiconductors

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Product data sheet Supersedes data of Apr TDA Light position controller. Product specification IC24 Data Handbook.

Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Designed for general-purpose amplifier and low speed switching applications. This Datasheet is presented by the m anufacturer.

EdwinvanMierlo A question being on-topic elsewhere dztasheet not make it off-topic here. BZX series Voltage regulator diodes. Application information Where application information is given, it is advisory and does not form part of the specification. Product data sheet Supersedes data of May General description Datssheet general-purpose transistors.

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We make every effort to understand the difficulties More information. Quick reference data Rev. High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.

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(PDF) BFY51 Datasheet download

Product data sheet Supersedes data of Oct All leads are isolated More information. High voltage fast-switching NPN power transistor.

High oltage Switching Features: They are designed for high speed. Phil Frost – W8II datxsheet Philips Semiconductors Philippines Inc. Secondary protection for DSL lines. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. NPN general-purpose transistors in small plastic packages. Using a similar search at your favorite parts source I bet you can find some other replacements which are cheap and available in your area.

Stress above one or more of the limiting values may cause permanent damage to the device. We make every effort bf5y1 understand the difficulties. They are designed for high speed More information.

Product specification Supersedes data of Aug RF transistor with internal bias circuit. Benefit is lower component count, internal compensation for temperature and current gain spread. V SCA54 All rights are reserved. Product specification Supersedes data of May BoxTelFax Belarus: NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

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Philips Semiconductors, 6F, No. Designed for use in general purpose power amplifier and switching applications. NPN medium power transistor. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. Avis Eustacia Chase 1 years ago Views: Product specification Supersedes data of Apr Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.

Note that as Phil said, you’ll be replacing multiple components in your circuit — and it’s far from unlikely you’ll also have to change a few bias resistors to keep the same performance.